The power dissipation of a class C amplifier is normally? very low very high the same as a class B NONE
The insulated-gate bipolar transistor (IGBT) combines the? input characteristics of a MOSFET with the output characteristics of a BJT. output characteristics of a MOSFET with the input characteristics of a BJT. may be both none
One of the three terminals of a FET analogous to the collector of a BJT called? gate source drain none
The portion of the FET characteristic curve lying below pinch-off? active region cut off region saturation region none of these
The value of the drain-to-source voltage of a FET at which the drain current becomes constant when the gate-to-source voltage is zero.? peak inverse voltage forward breakdown voltage pinch off voltage none
For an n-channel D-MOSFET, negative values of VGS produce the …………. and positive values produce the .? depletion mode, enhancement mode enhancement mode, depletion mode may be both none
Field-effect transistors are? bipolar devices unipolar devices (one-charge carrier) may be both none
which of these are 4 layer devices? DIAC,TRIAC SUS SCR SCS UJT A,B,C,D
The 4-layer diode is a thyristor that conducts when the voltage across its terminals exceeds the? breakdown potential breakover potential. pinch off voltage none
The value of the anode current below which a device switches from the forward-conduction region to the forward-blocking region.? holding current none of these switching current all of these
Silicon-controlled rectifier; a type of three-terminal thyristor that conducts current when triggered on by a voltage at the single gate terminal and remains on until the anode current falls below a specified value? SCR SCS UJT FET
A three-terminal thyristor that can conduct current in either direction when properly activated? UJT DIAC TRIAC SHOKLEY DIODE
A thyristor has? two pn junctions and two terminals three pn junctions and two terminals four pn junctions and three terminals only two terminals
A 4-layer diode turns on when the anode-to-cathode voltage exceeds? 0.7 V the gate voltage the forward-breakover voltage the forward-blocking voltage
